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| ST780CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 1350 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case TO-200AC (B-PUK) * Lead (Pb)-free TO-200AC (B-PUK) RoHS COMPLIANT * Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) 1350 A * DC motor controls * Controlled DC power supplies * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES 1350 Ths 55 2700 IT(RMS) Ths 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical 25 24 400 A 25 600 2986 2726 400 to 600 150 - 40 to 125 V s C kA2s UNITS A C A C I2 t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 06 VRSM, MAXIMUM IDRM/IRRM MAXIMUM VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V V mA 400 600 500 700 80 ST780C..L Document Number: 94415 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST780CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 1350 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 1350 (500) 55 (85) 2700 24 400 25 600 20 550 Sinusoidal half wave, initial TJ = TJ maximum 21 500 2986 2726 2112 1928 29 860 0.80 0.90 0.14 0.13 1.31 600 1000 kA2s V kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 3600 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 C, anode supply 12 V resistive load m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s VALUES 1000 1.0 s 150 UNITS A/s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 80 UNITS V/s mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94415 Revision: 11-Aug-08 ST780CLPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 1350 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM IGT TEST CONDITIONS TJ = TJ maximum, tp 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp 5 ms TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger TJ = 25 C TJ = 125 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 200 100 50 2.5 1.8 1.1 10 VALUES TYP. MAX. UNITS 10.0 2.0 3.0 20 5.0 200 3.0 - W A V mA V mA 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.073 0.031 0.011 0.006 14 700 (1500) 255 See dimensions - link at the end of datasheet N (kg) g K/W UNITS C Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style RthC-hs TO-200AC (B-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.009 0.011 0.014 0.020 0.036 DOUBLE SIDE 0.009 0.011 0.014 0.020 0.036 RECTANGULAR CONDUCTION SINGLE SIDE 0.006 0.011 0.015 0.021 0.036 DOUBLE SIDE 0.006 0.011 0.015 0.021 0.036 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 94415 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST780CLPbF Series Vishay High Power Products Maximum Allowable Heats T ink emperature (C) 130 120 110 100 90 Conduction Angle Phase Control Thyristors (Hockey PUK Version), 1350 A Maximum Allowable Heats T ink emperature (C) 130 120 110 100 90 80 70 60 50 40 30 20 0 500 30 60 90 120 180 DC 1000 1500 2000 2500 3000 Conduction Period S 780C..L S T eries (S ingle S ide Cooled) R thJ-hs (DC) = 0.073 K/ W S 780C..L S T eries (Double S Cooled) ide RthJ-hs (DC) = 0.031 K/ W 80 70 60 50 40 0 200 400 600 800 1000 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 30 60 90 120 180 Average On-state Current (A) Fig. 4 - Current Ratings Characteristics Maximum Allowable Heatsink T emperature (C) 120 110 100 90 80 70 60 50 40 30 20 0 200 400 30 S T780C..L S eries (S ingle S Cooled) ide R thJ-hs (DC) = 0.073 K/ W Maximum Average On-s tate Power Loss (W) 130 2500 180 120 90 60 30 RMS Limit 2000 1500 Conduction Period 1000 Conduc tion Angle 60 90 120 600 180 500 S 780C..L S T eries TJ = 125C DC 0 0 400 800 1200 1600 2000 Average On-state Current (A) Fig. 5 - On-State Power Loss Characteristics 800 1000 1200 1400 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Maximum Allowable Heats Temp erature (C) ink 130 120 110 100 90 80 70 60 50 40 30 20 0 400 30 Maximum Average On-state Power Loss (W) S T780C..L S eries (Double S Cooled) ide R thJ-hs (DC) = 0.031 K/ W 3500 3000 2500 2000 1500 1000 500 0 0 500 1000 1500 2000 2500 3000 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics S 780C..L S T eries T = 125C J RMS Limit Conduction Period DC 180 120 90 60 30 Conduction Angle 60 90 120 180 800 1200 1600 2000 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94415 Revision: 11-Aug-08 ST780CLPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 1350 A Peak Half S Wave On-state Current (A) ine Peak Half S Wave On-state Current (A) ine 22000 20000 18000 16000 14000 12000 10000 1 At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s 26000 Maximum Non Repetitive S urge Current Vers Puls Train Duration. Control us e 24000 Of Conduction May Not Be Maintained. Initial T = 125C J 22000 No Voltage Reapplied Rated VRRMReapplied 20000 18000 16000 14000 12000 S 780C..L S T eries S 780C..L S T eries 10 100 10000 0.01 0.1 1 Number Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10000 Instantaneous On-state Current (A) Pulse T rain Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled T = 25C J 1000 T = 125C J S 780C..L S T eries 100 0.5 1 1.5 2 2.5 Instantaneous On-state Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics T rans ient T hermal Impedance Z thJ-hs (K/ W) 0.1 S teady S tate Value R thJ-hs = 0.073 K/ W (S ingle S ide Cooled) R thJ-hs = 0.031 K/ W (Double S Cooled) ide 0.01 (DC Operation) S 780C..L S T eries 0.001 0.001 0.01 0.1 S quare Wave Puls Duration (s) e 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94415 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST780CLPbF Series Vishay High Power Products 100 Instantaneous Gate Voltage (V) Phase Control Thyristors (Hockey PUK Version), 1350 A Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) R ommended load line for ec <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b) T j=-40 C (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms T j=25 C T j=125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: S 780C..L S T eries 0.1 1 Frequenc y Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 78 2 - 0 3 C 4 06 5 L 6 1 7 8 PbF 9 Thyristor Essential part number 0 = Converter grade C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) L = PUK case TO-200AC (B-PUK) 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 8 9 - Critical dV/dt: Lead (Pb)-free None = 500 V/s (standard selection) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95076 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94415 Revision: 11-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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